ABC for Temporally Sampled Genetic Data

ABC for Temporally Sampled Genetic Dat

Statement of Richard A. Beaumont Before the Commission on the Future of Worker-Management Relations

Testimony_Beaumont_011994.pdf: 483 downloads, before Oct. 1, 2020

Building an Optimal Census of the Solar Neighborhood with Pan-STARRS Data

We estimate the fidelity of solar neighborhood (D < 100 pc) catalogs soon to be derived from Pan-STARRS astrometric data. We explore two quantities used to measure catalog quality: completeness, the fraction of desired sources included in a catalog; and reliability, the fraction of entries corresponding to desired sources. We show that the main challenge in identifying nearby objects with Pan-STARRS will be reliably distinguishing these objects from distant stars, which are vastly more numerous. We explore how joint cuts on proper motion and parallax will impact catalog reliability and completeness. Using synthesized astrometry catalogs, we derive optimum parallax and proper motion cuts to build a census of the solar neighborhood with the Pan-STARRS 3 Pi Survey. Depending on the Galactic latitude, a parallax cut pi / sigma pi > 5 combined with a proper motion cut ranging from mu / sigma mu > 1-8 achieves 99% reliability and 60% completeness.Comment: 7 Pages, 4 Figures, 3 Tables. PASP in pres

Simple approach to include external resistances in the Monte Carlo simulation of MESFETs and HEMTs

The contact and external series resistances play an important role in the performance of modern 0.1-0.2 μm HEMT's. It is not possible to include these resistances directly into the Monte Carlo simulations. Here we describe a simple and efficient way to include the external series resistances into the Monte Carlo results of the intrinsic device simulations. Examples of simulation results are given for a 0.2 μm pseudomorphic HEMT

Preliminary Results for LP VPE X-Ray Detectors

Thick epitaxial layers have been grown using Low Pressure Vapour Phase Epitaxy techniques with low free carrier concentrations . This type of material is attractive as a medium for X-ray detection, because of its high conversion efficiency for X-rays in the medically interesting energy range.Comment: 4 pages. PS file only - original in WORD. Also available at http://ppewww.ph.gla.ac.uk/preprints/97/07

Strain engineered In_xGa_1-xAs channel pHEMTs on virtual substrates: a simulation study

The impact of In&lt;sub&gt;x&lt;/sub&gt;Al&lt;sub&gt;1-x&lt;/sub&gt;As strain control buffers on the performance of low In content InGaAs channel pseudomorphic high electron mobility transistor p(HEMT) is investigated. It is shown that relaxed and tensile strained channel devices outperform the conventional compressively strained channel devices. It is argued that strain engineering in GaAs based devices makes it possible to realise RF characteristics comparable to InP based pHEMTs while obtaining improved breakdown characteristics

RF performance of strained Si MODFETs and MOSFETs on "virtual" SiGe substrates: A Monte Carlo study

No abstract avaliable

Command Method: A Gap in Military Historiography

Examples from history make everything clear, and in addition they afford the most convincing kind of proof in the empirical fields of knowledge. This applies more to the art of war than anything else. 1 Perhaps a final and vital conclusion is that a prolonged peacetime service is not necessarily conducive for the preparation of military personnel for war.